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Fast models for statistical process/device simulation

Andrzej Pfitzner (Institute of Microelectronics and Optoelectronics Warsaw University of Technology Koszykowa 75,00–662 Warszawa, Poland fax: (22) 25–03–93, phone: (22) 25–30–55, e‐mail: APF@PLWATU21.BITNET)
Miroslaw Grygolec (Institute of Microelectronics and Optoelectronics Warsaw University of Technology Koszykowa 75,00–662 Warszawa, Poland fax: (22) 25–03–93, phone: (22) 25–30–55, e‐mail: APF@PLWATU21.BITNET)

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 1 April 1992

38

Abstract

A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction. This method combines accurate numerical solutions of the transport equations with internally calibrated fast analytical (semi‐empirical) models.

Citation

Pfitzner, A. and Grygolec, M. (1992), "Fast models for statistical process/device simulation", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 11 No. 4, pp. 545-548. https://doi.org/10.1108/eb010115

Publisher

:

MCB UP Ltd

Copyright © 1992, MCB UP Limited

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