A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON

Abstract

The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and efforts are made to reduce process complexity. Thus a need exists for accurate simulation over a wide range of diffusion conditions, based on necessity on well tested, predictive physical models.

Citation

COWERN, N.E.B. and GODFREY, D.J. (1987), "A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 1, pp. 59-63. https://doi.org/10.1108/eb010302