TSMC announces process technologies for integrated light emitting diodes drivers

Microelectronics International

ISSN: 1356-5362

Article publication date: 11 May 2010

43

Citation

(2010), "TSMC announces process technologies for integrated light emitting diodes drivers", Microelectronics International, Vol. 27 No. 2. https://doi.org/10.1108/mi.2010.21827bad.002

Publisher

:

Emerald Group Publishing Limited

Copyright © 2010, Emerald Group Publishing Limited


TSMC announces process technologies for integrated light emitting diodes drivers

Article Type: New products From: Microelectronics International, Volume 27, Issue 2

TSMC have unveiled modular Bipolar, CMOS DMOS (BCD) process technologies targeting high voltage integrated light emitting diodes (LED) driver devices.

The new BCD technologies feature a voltage spectrum running from 12 to 60 volts to support multiple LED applications including LCD flat panel display backlighting, LED displays, general lighting, and automotive lighting. The technology portfolio spans process nodes from 0.6 to 0.18 μm with a number of digital core modular options for varying digital control circuit gate densities. The CyberShuttle™ prototyping service supports the 0.25 and 0.18 μm processes for preliminary function verification.

The new processes provide a number of integration features that reduce a system’s component counts. The robust high-voltage DMOS capability provides MOSFET switch integration to reduce the bill of materials. The integrated component options include high-voltage bipolar transistors, high-voltage, high-precision capacitors, high-resistance poly, and Zener diodes to reduce external passive component count and significantly reduce circuit board area.

The DMOS process supports foundry’s leading Rdson performance (i.e. 72 m/mm2 at BV>80 V for a specific 60 V NLDMOS) and its high current driving capability optimises device sizes that enhance power efficiency. A robust safe operating area makes it ideal for both power switch and driver design. Fine detailed characterisation also provides a useful reference to optimise the design budget for optimum chip size.

On the CMOS side, a 5-V capability supports analog pulse width modulation (PWM) controller design elements and the 2.5- and 1.8-V logic cores are optional modules for higher level digital integration. In addition, logic compatible one-time programmable (OTP) and multi-time programmable memory options are available for enhanced digital programming design.

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