A three‐dimensional transmission line matrix (TLM) simulation method for thermal effects in high power insulated gate bipolar transistors

Abstract

In this paper, thermal analysis for a 1,200 A, 3.3 kV insulated gate bipolar transistor (IGBT) module was investigated and analysed using the three‐dimensional transmission line matrix (3D‐TLM) method. This paper also reviews the present status of the use of various thermal heat spreaders such as AlSiC MMC, Cu‐Mo and graphite‐Cu MMC and compares these with copper based heat spreaders and the use of aluminium nitride (AlN), diamond and BeO as substrates and their effect to dissipate the heat flux in heat sources localised in IGBT module design. The TLM method was found to be a versatile tool which is ideally suited to the modelling of many power electronic devices and which proved very useful in the study of transient thermal effects in a variety of device structures.

Citation

Hocine, R., Lim, D., Pulko, S.H., Boudghene Stambouli, M.A. and Saidane, A. (2003), "A three‐dimensional transmission line matrix (TLM) simulation method for thermal effects in high power insulated gate bipolar transistors", Circuit World, Vol. 29 No. 3, pp. 27-32. https://doi.org/10.1108/03056120310460793